Trends in semiconductor laser design:
نویسندگان
چکیده
The trade-off between the effect of leakage suppression and the increase of related optical loss due to placement of the p-doping in 1.3-1.55μm InGaAsP MQW edgeemitting lasers is detailed. The effect of the Zn doping profile on laser characteristics is illustrated by experimental results obtained for telecom lasers and high power lasers. The design approach combining broadened waveguides with p-doping profile optimization is discussed. 16W of pulsed optical power is obtained from 100μm aperture 1.5μm InGaAsP MQW high power lasers with broadened waveguide and doped p-cladding/SCH interface.
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